| PART |
Description |
Maker |
| DTD513ZE DTD513ZM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes
|
| 2SB118410 2SB1184TLR 2SB1243TV2Q |
Power Transistor (-60V, -3A)
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
|
Rohm
|
| EN7645 |
Bipolar Transistor, (-12V)15V, (-1A)1.4A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SD1615 |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| NSV40200LT1G NTB75N03L09T4G NSV1C300ET4G NTD2955PT |
40 V, 4.0 A, Low VCE(sat) PNP Transistor
Power MOSFET 75 Amps, 30 Volts
100 V, 3.0 A, Low VCE(sat) PNP Transistor
|
ON Semiconductor
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| TSD882S |
Low Vce(sat) NPN Transistor 低Vce（sat）NPN晶体
|
Taiwan Semiconductor Co., Ltd.
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
